During a technology webinar held on October 21, 2026, Micron Technology detailed an artificial intelligence-focused roadmap featuring a new generation of high-bandwidth memory every year through 2030, from HBM4 to HBM6. Custom and vertical variants, called vHBM, are slated for 2028 and target bandwidth of approximately 2 TB/s with energy use below 1 picojoule per bit. Micron also plans direct GPU access to flash storage and volume production of the 1-delta DRAM node and G11 NAND in the second half of 2027, with the latter exceeding 400 layers and delivering roughly twice the density of G9. The company expects memory supply to remain tight through fiscal 2028, supported by customer agreements accounting for nearly 35% of sales through 2030, while skipping a planned generation to advance its 6F² and 3D DRAM development.
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