ASML, TSMC, and research institute imec demonstrated the first scaled complementary transistors built from 2D materials on standard 300mm wafers, achieving a 94% yield. N-type transistors use molybdenum disulfide (MoS₂) while p-type transistors rely on tungsten disulfide (WS₂) or tungsten diselenide (WSe₂), with a contacted poly pitch of 50 nanometers. These results, presented in June 2026 at the IEEE/JSAP Symposium on VLSI Technology and Circuits, were achieved using ASML’s single-patterning EUV lithography. The breakthrough indicates that commercial post-silicon transistor production is shifting from science fiction to a realistic engineering timeline, though integration challenges still remain to be solved.
Source: Read the original article
