SK Hynix plans to increase its sixth-generation 10nm-class 1c DRAM share from 13% in Q2 2026 to 34% by Q4 2026, overtaking Samsung whose estimated share will reach 31% in the same quarter. The 1c technology serves as the foundation for HBM4E memory with mass production scheduled for 2027. SK Hynix shipped 12-layer HBM4E samples in June 2026 with 48 GB capacity and 16 Gbps per pin data rates, demonstrating more than 20% better power efficiency compared to HBM4. According to Counterpoint Research, SK Hynix is expected to hold approximately 55% of the HBM4 market share in 2026.
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