Samsung Electronics is preparing to build a second factory in Taylor, Texas, called Taylor Fab 2, with production expected to begin in 2030. Covering approximately 2.7 million square feet, the plant would exclusively manufacture base dies for high-bandwidth memory supplied to AMD and Nvidia. The base dies would be paired with DRAM core dies produced in South Korea to form complete HBM stacks, targeting 2 nm production compared with the 4 nm process currently used for HBM4. Samsung’s first Taylor factory, which is expected to supply Tesla under a $16.5 billion agreement, is targeted to reach full operational capacity by the end of 2026. The expansion strengthens Samsung’s position against TSMC and adds US capacity for a critical AI component, although the dependence on South Korean DRAM production remains.
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