Nagare Labs, a Georgia Tech spinout backed by former Intel CEO Pat Gelsinger, unveiled Z2RAM on October 26, 2026, a capacitor-free, two-transistor memory built on oxide semiconductors. The technology is intended to be stacked directly above AI accelerators to address the memory wall, the widening gap between processor computing speed and memory data-transfer speed. For its six-layer first generation, the company projects more than five times the bit density of 2 nm high-density SRAM, access speed fourteen times faster than current DRAM, and read energy of roughly one-third of standard SRAM. Published research has demonstrated data retention exceeding 300 seconds at temperatures up to 85 degrees Celsius, but the figures still rely on experimental cells. Nagare Labs targets working memory-tile samples around 2030 and mass production within a decade, pending validation of multilayer prototypes, large-scale reliability, and the addition of a manufacturing partner.
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