SanDisk tapes out first High Bandwidth Flash memory die, targets 2027 samples

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SanDisk has completed the design of its first High Bandwidth Flash (HBF) memory die, a technology that could offer near-HBM performance at a lower cost. The first generation will target up to 512 GB per stack with read bandwidths around 1.6 TB/s, representing 8 to 16 times the capacity of current HBM systems. Projected performance would be within 2.2% of theoretical HBM limits. SanDisk, now an independent entity following its separation from Western Digital, signed a memorandum of understanding with SK hynix in August 2025 to jointly develop HBF specifications, with public release scheduled for August 2026.

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